Flash memory cell and fabricating method thereof

ABSTRACT

A flash memory cell is provided. A deep well is disposed in a substrate and a well is disposed within the deep well. A stacked gate structure is disposed on the substrate. A source region and a drain region are disposed in the substrate on each side of the stacked gate structure. A select gate is disposed between the stacked gate structure and the source region. A first gate dielectric layer is disposed between the select gate and the stacked gate structure. A second gate dielectric layer is disposed between the select gate and the substrate. A shallow doped region is disposed in the substrate under the stacked gate structure and the select gate. A deep doped region is disposed in the substrate on one side of the stacked gate structure. The conductive plug on the substrate extends through the drain region and the deep doped region.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 93123057, filed on Aug. 2, 2004.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a non-volatile memory and fabricatingmethod thereof. More particularly, the present invention relates to aflash memory cell and fabricating method thereof.

2. Description of the Related Art

Flash memory is a type of non-volatile memory that allows multiple datawriting, reading and erasing operations. The stored data will beretained even after power to the device is removed. With theseadvantages, flash memory has become one of the most widely adoptednon-volatile memories for personal computer and electronic equipment.

A typical flash memory has a floating gate and a control gate fabricatedusing doped polysilicon. To program data into or erase data from a flashmemory cell, an appropriate bias voltage is applied to the sourceregion, the drain region and the control gate respectively so thatelectrons are injected into the floating gate or withdrawn from thefloating gate. The most common mode for injecting electrons into a flashmemory cell includes the channel hot-electron injection (CHEI) mode andthe Fowler-Nordheim tunneling mode. In general, the types of programmingand erasing operations carried out on the memory devices depend on theways the electrons are injected or pulled out.

FIG. 1 is a schematic cross-sectional view showing a single memory cellof a conventional flash memory. The flash memory cell mainly includes ann-type substrate 100, a deep p-type well 102, an n-type well 104, astacked gate structure 106, an n-type source region 108 a, an n-typedrain region 108 b, a p-type shallow doped region 109, a p-type deepdoped region 110 and a conductive plug 112. The deep p-type well 102 isdisposed in the substrate 100 and the n-type well 104 is disposed withinthe deep p-type well 102. The stacked gate structure 106 is disposed onthe substrate 100. The stacked gate structure 106 includes a tunnelinglayer 114, a floating gate 116, a gate dielectric layer 118 and acontrol gate 120 sequentially stacked over the substrate 100. The n-typesource region 108 a and the n-type drain region 108 b are disposed inthe n-type well 104 and the p-type deep doped region 110 on each side ofthe stacked gate structure 106. The p-type shallow doped region 109 isdisposed in the n-type well 104 underneath the stacked gate structure106. The p-type deep doped region 110 is disposed within the n-type well104 on one side of the stacked gate structure 106 but adjacent to thep-type shallow doped region 109. The conductive plug 112 in thesubstrate 100 extends downward to pass through the n-type drain region108 b and connect with a portion of the p-type deep doped region 110.

To program data into the aforementioned flash memory cell, a biasvoltage is applied to the source region, the drain region and thecontrol gate respectively. However, the control gate and the sourceregion of the memory cell are also connected to the control gate and thesource region of a neighboring memory cell. That is, two memory cellsshare a common word line and source line. Consequently, a voltageapplied to select one particular memory cell may interfere with othernon-selected memory cells on the same word line leading to reliabilityproblems in the memory devices.

In addition, the disposition of the control gate and the source regionclose to each other may increase the probability of having a leakydevice when a flash memory cell is programmed.

Furthermore, the aforementioned programming operation may cause theflash memory cell to be over-programmed, thereby leading to subsequentread-out problems. Due to the restriction imposed by theover-programming problems, the operable threshold voltage range of thedevice is severely compressed. In other words, the flash memory cell islimited to the storage of a single data bit.

SUMMARY OF THE INVENTION

Accordingly, at least one objective of the present invention is toprovide a flash memory cell capable of reducing the effect of a voltageapplied to a flash memory cell from affecting a neighboring memory cellin a flash memory cell programming operation.

At least a second objective of the present invention is to provide amethod of fabricating and operating a flash memory cell capable ofimproving the reliability of the device.

To achieve these and other advantages and in accordance with the purposeof the invention, as embodied and broadly described herein, theinvention provides a flash memory cell. The flash memory cell includes afirst conductive type deep well, a second conductive type well, astacked gate structure, a second conductive type source region, a secondconductive type drain region, a select gate, a first gate dielectriclayer, a second gate dielectric layer, a first conductive type shallowdoped region, a first conductive type deep doped region and a conductiveplug. The first conductive type deep well is disposed in the substrateand the second conductive type well is disposed within the firstconductive type deep well. The stacked gate structure is disposed on thesubstrate. The stacked gate structure includes a tunneling layer, afloating gate, an inter-gate dielectric layer and a control gatesequentially stacked over the substrate. The second conductive typesource region and the second conductive type drain region are disposedin the substrate on each side of the stacked gate structure. The selectgate is disposed between the stacked gate structure and the secondconductive type source region. The first gate dielectric layer isdisposed between the select gate and the stacked gate structure. Thesecond gate dielectric layer is disposed between the select gate and thesubstrate. The first conductive type shallow doped region is disposed inthe second conductive type well underneath the stacked gate structureand the select gate. The second conductive type source region isdisposed in the first conductive type shallow doped region. The firstconductive type deep doped region is disposed in the second conductivetype well on one side of the stacked gate structure but adjacent to thefirst conductive type shallow doped region. The second conductive typedrain region is disposed in the first conductive type deep doped region.The conductive plug is disposed within the substrate. The conductiveplug extends downward to pass through the second conductive type drainregion and ends up with a portion inside the first conductive type deepdoped region.

Because a select gate is deployed in the flash memory cell of thepresent invention, problems due to device leakage or over-programming ina conventional programming operation are effectively eliminated.Furthermore, programming a flash memory cell will no longer affect aneighboring flash memory cell. Hence, overall reliability of the memorydevice is improved. In addition, each flash memory cell can be used as amulti-bit storage cell.

The present invention also provides a method of fabricating a flashmemory cell. First, a second conductive type deep well is formed in afirst conductive type substrate and then a first conductive type well isformed in the second conductive type deep well. Thereafter, a secondconductive type shallow doped region is formed in the first conductivetype well. The shallow doped well is adjacent to the surface of thesubstrate. Next, a stacked gate structure is formed over the substrate.The stacked gate structure includes a tunneling layer, a floating gate,an inter-gate dielectric layer and a control gate sequentially formedover the substrate. A gate dielectric layer is formed between thestacked gate structure and the substrate. After that, a select gate isformed on one sidewall of the stacked gate structure. A deep dopedregion is formed in the substrate on the other side of the stacked gatestructure. The deep doped region and the shallow doped region areadjacent to each other. Thereafter, a source region and a drain regionare formed on each side of the select gate and the stacked gatestructure respectively. The source region is formed in the substrate onone side of the select gate and the drain region is formed in thesubstrate on one side of the stacked gate structure. A dielectric layeris formed over the substrate to cover the stacked gate structure and thesubstrate. A contact opening is formed in the dielectric layer to exposea portion of the drain region and the deep doped region. Finally, aconductive plug is formed in the contact opening.

Because a select gate is deployed in the flash memory cell of thepresent invention, problems due to device leakage or over-programming ina conventional programming operation are effectively eliminated.Furthermore, the processes for forming the memory cell according to thepresent invention are compatible with the convention fabricating method.Hence, there is no need to purchase special equipment.

The present invention also provides a method of operating a flash memorycell. The operating method is suitable for operating the aforementionedflash memory cell. The operating method includes the following rules. Toprogram data into the flash memory cell, a first positive voltage isapplied to the source region and the drain region, a first negativevoltage is applied to the control gate. Both the select gate and thefirst conductive type deep well are set to 0V. To erase data from theflash memory cell, a second positive voltage is applied to the controlgate and a second negative voltage is applied to the source region andthe first conductive type deep well. The drain region is maintained in afloating state and the select gate is set to 0V. To read data from theflash memory cell, a third positive voltage is applied to the sourceregion and a fourth positive voltage is applied to the control gate andthe select gate. The first conductive type deep well is set to 0V.

Because of the select gate inside the flash memory cell of the presentinvention, problems due to device leakage or over-programming in aconventional programming operation are effectively eliminated.Furthermore, programming a flash memory cell will no longer affect aneighboring flash memory cell. Hence, overall reliability of the memorydevice is improved. In addition, each flash memory cell can be used as amulti-bit storage cell.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1 is a schematic cross-sectional view showing a single memory cellof a conventional flash memory.

FIGS. 2A through 2C are schematic cross-sectional views showing thesteps for fabricating a flash memory cell according to one preferredembodiment of the present invention.

FIG. 3 is a schematic cross-sectional view of a flash memory cellaccording to one preferred embodiment of the present invention.

FIG. 4 is an equivalent circuit diagram of a NOR type memory arrayaccording the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the present preferredembodiments of the invention, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts.

In the following embodiment, the first conductive type is in an n-dopedstate and the second conductive type is in a p-doped stage. However,anyone familiar with the technique may interchange the doping conditionssaid above. In the following, only one set of dopant types is describedin detail. In addition, a NOR type flash memory cell array having commonsource region is used in the following description.

FIGS. 2A through 2C are schematic cross-sectional views showing thesteps for fabricating a flash memory cell according to one preferredembodiment of the present invention. As shown in FIG. 2A, a substrate200 such as an n-type substrate is provided and then a p-type deep well202 is formed in the substrate 200. Thereafter, an n-type well 204 isformed within the p-type deep well 202. A p-type shallow doped region206 is formed in the n-type well 204 adjacent to the substrate 200. Thep-type deep well 202, the n-type well 204 and the p-type shallow dopedregion 206 are formed, for example, by performing an ion implantation.

Thereafter, a stacked gate structure 208 is formed over the substrate200. The stacked gate structure 208 includes a tunneling layer 210, afloating gate 212, an inter-gate dielectric layer 214 and a control gate216 sequentially formed over the substrate 200. The stacked gatestructure 208 is formed, for example, by sequentially forming atunneling material layer (not shown), a floating gate material layer(not shown), an inter-gate dielectric material layer (not shown) and acontrol gate material layer (not shown) over the substrate 200 and thenperforming a photolithographic and etching process. The floating gateand the control gate are fabricated using doped polysilicon, forexample. Since the process and related parameters for forming thestacked gate structure 208 should be familiar to those skilled in theart of semiconductor production, a detail description of these steps isomitted.

Thereafter, a gate dielectric layer 218 is formed between the stackedgate structure 208 and the substrate 200. The gate dielectric layer 218is a silicon oxide layer formed by performing a chemical vapordeposition process, for example. After that, a conductive material layer220 is formed over the gate dielectric layer 218. The conductivematerial layer 220 is a doped polysilicon layer or other suitableconductive material layer formed by performing a chemical vapordeposition process, for example.

As shown in FIG. 2B, a self-aligned etching process is carried out toform a pair of conductive spacers 220 a on the sidewalls of the stackedgate structure 208. The self-aligned etching process is an anisotropicetching process, for example. Thereafter, one of the conductive spacers220 a on the sidewalls of the stacked gate structure 208 and then thegate dielectric layer 218 not covered by the conductive spacer 220 a areremoved to form the asymmetrical sidewall structure. It should be notedthat the retained conductive spacer 220 a is disposed on the same sideas a subsequently formed source region. The conductive spacer 220 a issubsequently used as a select gate.

Thereafter, a p-type deep doped region 222 is formed in the n-type well204 on one side of the stacked gate structure 208. The p-type deep dopedregion 222 is adjacent to the p-type shallow doped region 206. Thep-type deep doped region 222 is formed, for example, by performing anion implantation. It should be noted that the p-type deep doped region222 is disposed on the same side as a subsequently formed drain region.

As shown in FIG. 2C, an n-type source region 224 a and an n-type drainregion 224 b are formed on each side of the select gate 220 a and thestacked gate structure 208. The n-type source region 224 a is formedacross the p-type shallow doped region 206 and extend to the n-typesubstrate 200 on one side of the select gate 220 a. For a NOR type flashmemory cell array, every pair of neighboring stacked gate structures 208uses a common n-type source region 224 a. The n-type drain region 224 bis formed in the p-type deep doped region 222 on another side of thestacked gate structure 208. The n-type source region 224 a and then-type drain region 224 b are formed in an ion implantation, forexample.

A dielectric layer 226 is formed over the substrate 200 to cover thestacked gate structure 208 and the substrate 200. Thereafter, a contactopening 228 is formed in the dielectric layer 226 to expose a portion ofthe drain region 224 b and the p-type deep doped region 222. Thedielectric layer 226 is fabricated using silicon oxide, siliconoxynitride or other suitable material. The method of forming thedielectric layer 226 includes depositing a dielectric material layerover the substrate 200 and then performing a photolithographic andetching process to define the contact opening 228.

After removing the drain region 224 b and a portion of the deep dopedregion 222 inside the contact opening 228, a conductive material isdeposited into the contact opening 228 to form a conductive plug 230. Itshould be noted that the conductive plug 230 shorts the drain region 224b and the deep doped region 222 together. The conductive plug 230 isfabricated using tungsten or other suitable conductive material, forexample. The method of forming the conductive plug 230 includes, forexample, depositing a conductive material into the contact opening 228and performing a chemical-mechanical polishing to remove excess materialoutside the opening 228.

Because a select gate is deployed in the flash memory cell of thepresent invention, problems due to device leakage or over-programming ina conventional programming operation are effectively eliminated.Furthermore, the processes for forming the memory cell according to thepresent invention are compatible with the convention fabricating method.Hence, there is no need to purchase special equipment.

FIG. 3 is a schematic cross-sectional view of a flash memory cellaccording to one preferred embodiment of the present invention. As shownin FIG. 3, the flash memory cell mainly includes a substrate 300, astacked gate structure 302, an n-type source region 304 a, an n-typedrain region 304 b, a select gate 306, a gate dielectric layer 308, ap-type shallow doped region 310, a p-type deep doped region 312, aconductive plug 314, an n-type well 316 and a p-type deep well 318.

The p-type deep well 318 is disposed in the substrate 300 and the n-typewell 316 is disposed within the p-type deep well 318. The stacked gatestructure 302 is disposed on the substrate 300. The stacked gatestructure 302 includes a tunneling layer 320, a floating gate 322, aninter-gate dielectric layer 324 and a control gate 326 sequentiallystacked over the substrate 300. The floating gate 322 and the controlgate 326 are fabricated from doped polysilicon, for example. Inaddition, the n-type source region 304 a and the n-type drain region 304b are disposed in the substrate 300 on each side of the stacked gatestructure 302.

Furthermore, the select gate 306 is disposed between the stacked gatestructure 302 and the n-type source region 304 a such that the selectgate 306 backs on one of the sidewalls of the stacked gate structure 302above a portion of the substrate 300. The select gate 306 is fabricatedfrom doped polysilicon, for example. The gate dielectric layer 308 isdisposed between the select gate 306 and the stacked gate structure 302and between the select gate 306 and the substrate 300. The gatedielectric layer 308 is a silicon oxide layer, for example.

The p-type shallow doped region 310 is disposed in the n-type well 316underneath the stacked gate structure 302 and the select gate 306,wherein the n-type source region 304 a is disposed in the p-type shallowdoped region 310. In addition, the p-type deep doped region 312 isdisposed in the n-type well 316 on one side of the stacked gatestructure 302 but adjacent to the p-type shallow doped region 310,wherein the n-type drain region 304 b is disposed in the p-type deepdoped region 312. The conductive plug 314 is disposed in the substrate300 such that the conductive plug 314 extends downward passing throughthe n-type drain region 304 b and ends up with a portion buried in thep-type deep doped region 312. Hence, the drain region 304 b and the deepdoped region 312 are shorted together through the conductive plug 314.

Because of the select gate inside the flash memory cell of the presentinvention, problems due to device leakage or over-programming in aconventional programming operation are effectively eliminated.Furthermore, programming a flash memory cell will no longer affect aneighboring flash memory cell. Hence, overall reliability of the memorydevice is improved. In addition, each flash memory cell can be used as amulti-bit storage cell.

In the following, the operating modes of a NOR type flash memory cellarray in programming, erasing and reading are described. FIG. 4 is anequivalent circuit diagram of a NOR type flash memory cell array. Table1 below lists out all the actual bias voltages used in operating theflash memory cell array. However, the values in Table 1 is used as anillustration only and should by no means limit the scope of the presentinvention.

As shown in FIG. 4, a plurality of memory cells Qn₁˜Qn₈ are aligned toform a 4*2 array. In FIG. 4, the selected word lines WL and thenon-selected word lines WL_(x) linking the control gate of the verticalmemory cells are also shown. In the present embodiment, the selectedword lines WL connect the control gates in the same memory cell columnsuch as the memory cells Q_(n3) and Q_(n4). The non-selected word linesWL_(x) connect the control gates in the same memory cell column such asQ_(n1) and Q_(n2) (or memory cells Q_(n5) and Q_(n6), Q_(n7) andQ_(n8)). Similarly, the selected select gate line SG and thenon-selected select gate lines SG_(x) connect the same memory cellcolumn. In the present embodiment, the selected select gate line SGconnects the select gate of the memory cells in the same column such asQ_(n3) and Q_(n4). The non-selected gate lines SG_(x) connect the selectgates in the same memory cell column such as Q_(n1) and Q_(n2) (ormemory cells Q_(n5) and Q_(n6), Q_(n7) and Q_(n8)). The source line SLconnects the source region in the same memory cell column, and the pairof neighboring memory cells in the same row uses the same source lineSL. In the present embodiment, the source line SL connects the sourceregion of the memory cells in the same column such as Q_(n3) and Q_(n4).Furthermore, the pair of neighboring memory cells in the same row suchas Q_(n1) and Q_(n3) uses the same source line SL. The selected bitlines SBL and the non-selected bit lines SBL_(x) connect the drainregion in the same memory cell column. In the present embodiment, theselect bit line SBL connects the drain of the memory cells in the samememory cell row such as Qn₁, Qn₃, Qn₅ and Qn₇. Similarly, thenon-selected bit line SBL_(x) connects the drain of the memory cells inthe same memory cell row such as Qn₂, Qn₄, Qn₆ and Qn₈. TABLE 1Programming Erasing Reading Selected word −10 V 10 V  3.3 V line WLNon-selected    0 V −6 V   0 V word line WL_(x) Selected bit    6 VFloating (F)   0 V line SBL Non-selected    0 V Floating (F)   0 V bitline SBL_(x) Source line SL    6 V   6 V 1.65 V Selected select    0 V  0 V  3.3 V gate line SG Non-selected    0 V   0 V   0 V select gateline SC_(x) Deep p-type    0 V −6 V   0 V well (318)

As shown in FIGS. 3 and 4 and Table 1, to program data into a flashmemory cell (for example, Q_(n3)), a positive voltage is applied to thesource region 304 a and the drain region 304 b and a negative voltage isapplied to the control gate 326. Both the select gate 306 and the deepp-type well 318 are set to 0V so that electric charges are induced toleave the floating gate 322 through F-N tunneling effect. During theprogramming operation, the voltage of the control gate, the bit line andthe select gate of neighboring memory cells are set to 0V. In onepreferred embodiment, the positive voltage is a voltage between 1 to 20Vand the negative voltage is a voltage between −1 to −20V. In the presentembodiment, the positive voltage is 6V while the negative voltage is−10V.

To erase data from a flash memory (for example, Q_(n3)), a positivevoltage is applied to the control gate 326 and a negative voltage isapplied to the source region 304 a and the deep p-type well 318. Theselect gate 306 is set to 0V and the drain region 304 b is set to afloating state so that electric charges are induced to enter thefloating gate 322 through F-N tunneling effect. During the erasingoperation, the same negative voltage applied to the source region 304 aand the deep p-type well 318 is applied to the control gate ofneighboring memory cells while the bit line is set to a floating stateand the select gate is set to 0V. In one preferred embodiment, thepositive voltage is a voltage between 1 to 20V and the negative voltageis a voltage between −1 to −20V. In the present embodiment, the positivevoltage is 10V while the negative voltage is −6V.

To read data from a flash memory (for example, Q_(n3)), a first positivevoltage is applied to the source region 304 a and a second positivevoltage is applied to the control gate 326 and the select gate 306. Thedrain region 304 b and the deep p-type well 318 are set to 0V. Duringthe reading operation, the control gate, the bit line and select gate ofneighboring memory cells is set to 0V. In one preferred embodiment, thefirst positive voltage is a voltage between 1 to 15V and the secondpositive voltage is a voltage between 1 to 15V. In the presentinvention, the first positive voltage is 1.65 and the second positivevoltage is 3.3V.

In the presence of a select gate inside the flash memory cell, theunexpected programming on non-selected cells in a programming operationwill be alleviated. This is mainly because the voltage of the commonsource region is blocked by the select gate to avoid electrons in thefloating gates being drain out. In other words, reliability of thememory device is improved.

Furthermore, for a single flash memory cell having a select gate betweenthe control gate and the source region, device leakage during aprogramming operation is no longer a serious problem. Moreover, with theproblem of over-programming a flash memory resolved, the presentinvention also eliminates read-out errors.

In addition, a programmed memory cell can have a larger thresholdvoltage window because a select gate is disposed between the controlgate and the source region. As a result, the flash memory cell of thepresent invention can also be modified to serve as a multi-bit storagecell.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

1. A method of fabricating a flash memory cell, comprising the steps of:providing a first conductive type substrate; forming a second conductivetype deep well in the first conductive type substrate; forming a firstconductive type well in the second conductive type deep well; forming asecond conductive type shallow doped region in the first conductive typewell, wherein the shallow doped region is adjacent to the substratesurface; forming a stacked gate structure over the substrate, whereinthe stacked gate structure comprises a tunneling layer, a floating gate,an inter-gate dielectric layer and a control gate sequentially stackedover the substrate; forming a gate dielectric layer between the stackedgate structure and the substrate surface; forming a select gate on asidewall of the stacked gate structure; forming a second conductive typedeep doped region in the substrate on the other side of the stacked gatestructure, wherein the deep doped region and the shallow doped regionare adjacent to each other; forming a source region and a drain regionon each side of the select gate and the stacked gate structure, whereinthe source region is formed in the substrate on one side of the selectgate and the drain region is formed in the substrate on one side of thestacked gate structure; forming a dielectric layer over the substrate tocover the stacked gate structure and the substrate, wherein thedielectric layer has a contact opening that exposes a portion of thedrain region and the deep doped region; and forming a conductive pluginside the contact opening.
 2. The method according to claim 1, whereinthe step of forming the select gate on the sidewall of the stacked gatestructure comprises: forming a conductive material layer over the gatedielectric layer; performing a self-aligned etching process to form apair of conductive spacers on the sidewalls of the stacked gatestructure; and removing one of the conductive spacers from the sidewallsof the stacked gate structure.
 3. The method according to claim 2,wherein the material constituting the conductive material layercomprises doped polysilicon.
 4. The method according to claim 1, whereinthe conductive plug shorts the drain region and the deep doped regiontogether.
 5. The method according to claim 1, wherein the source regionand the drain region are the first conductive type.
 6. The methodaccording to claim 1, wherein the first conductive type is n-type andthe second conductive type is p-type.
 7. A flash memory cell,comprising: a substrate; a first conductive type deep well disposed inthe substrate; a second conductive type well disposed within the firstconductive type deep well; a stacked gate structure disposed on thesubstrate, wherein the stacked gate structure comprises a tunnelinglayer, a floating gate, an inter-gate dielectric layer and a controlgate sequentially stacked over the substrate; a second conductive typesource region and a second conductive type drain region disposed in thesubstrate on each side of the stacked gate structure respectively; aselect gate disposed between the stacked gate structure and the secondconductive type source region; a first gate dielectric layer disposedbetween the select gate and the stacked gate structure; a second gatedielectric layer disposed between the select gate and the substrate; afirst conductive type shallow doped region disposed in the secondconductive type well underneath the stacked gate structure and theselect gate, wherein the second conductive type source region isdisposed in the first conductive type shallow doped region; a firstconductive type deep doped region disposed in the second conductive typewell on one side of the stacked gate structure but adjacent to the firstconductive type shallow doped region, wherein the second conductive typedrain region is within the first conductive type deep doped region; anda conductive plug disposed in the substrate passing downward through thesecond conductive type drain region with a portion buried within thefirst conductive type deep doped region.
 8. The flash memory cellaccording to claim 7, wherein the material constituting the select gatecomprises doped polysilicon.
 9. The flash memory cell according to claim7, wherein the material constituting the floating gate comprises dopedpolysilicon.
 10. The flash memory cell according to claim 7, wherein thematerial constituting the control gate comprises doped polysilicon. 11.The flash memory cell according to claim 7, wherein the materialconstituting the first or second gate dielectric layer comprises siliconoxide.
 12. The flash memory cell according to claim 7, wherein the flashmemory cells are arranged as a NOR type memory array.
 13. The flashmemory cell according to claim 7, wherein the first conductive type isp-type and the second conductive type is n-type.
 14. A method ofoperating the flash memory cell in claim 7, the operating methodcomprising: applying a first positive voltage to the source region andthe drain region, applying a first negative voltage to the control gateand setting the select gate and the first conductive type deep well to0V in programming the flash memory cell; applying a second positivevoltage to the control gate, applying a second negative voltage to thesource region and the first conductive type deep well, setting the drainregion to a floating state and setting the select gate to 0V in erasingdata from the flash memory cell; applying a third positive voltage tothe source region, applying a fourth positive voltage to the controlgate and the select gate, setting the first conductive type deep well to0V in reading data from the flash memory cell.
 15. The method accordingto claim 14, wherein the first positive voltage is between 1 to 20V andthe first negative voltage is between −1 to −20.
 16. The methodaccording to claim 14, wherein the second positive voltage is between 1to 20V and the second negative voltage is between −1 to −20V.
 17. Themethod according to claim 14, wherein the third positive voltage isbetween 1 to 15V and the fourth positive voltage is between 1 to 15V.